N-Channel MOSFET
FCD620N60ZF — N-Channel SuperFET® II FRFET® MOSFET
FCD620N60ZF
N-Channel SuperFET® II FRFET® MOSFET
600 V, 7.3 A, 620 m...
Description
FCD620N60ZF — N-Channel SuperFET® II FRFET® MOSFET
FCD620N60ZF
N-Channel SuperFET® II FRFET® MOSFET
600 V, 7.3 A, 620 mΩ
December 2014
Features
650 V @ TJ = 150oC Typ. RDS(on) = 528 mΩ Ultra Low Gate Charge (Typ. Qg = 20 nC) Low Effective output Capacitance (Typ. Coss(eff.) = 71 pF) 100% Avalanche Tested ESD Improved Capacity RoHS Compliant
Applications
LCD / LED / PDP TV and Monitor Lighting Solar Invertor / AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
D
G S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol VDSS
VGSS
ID
IDM EAS IAR EAR
dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
- DC - AC
(f > 1 Hz)
Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
(Note 1)
Single Pulsed Avalanche Energy...
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