P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UT4435-H
Preliminary
-8.0A, -30V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT4435-...
Description
UNISONIC TECHNOLOGIES CO., LTD
UT4435-H
Preliminary
-8.0A, -30V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state resistance.
The UTC UT4435-H is suitable for load switching, POL, LED applications, etc.
FEATURES
*RDS(ON) < 20mΩ @ VGS=-10V, ID=-8A RDS(ON) < 32mΩ @ VGS=-4.5V, ID=-5A
* High switching speed * Low gate charge
SYMBOL
Power MOSFET
SOP-8
ORDERING INFORMATION
Ordering Number
UT4435G-S08-R Note: Pin Assignment: S: Source
Package
1
SOP-8
S
G: Gate D: Drain
Pin Assignment 2345678 S SGDDDD
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R208-053.B
UT4435-H
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage Drain Current
Continuous
TC=25°C TC=100°C
Pulsed (Note 1)
VGSS ID IDM
±20 -8 -5.1 -32
V A A A
Power Dissipation
TC=25°C Derate above 25°C
PD
2.1 0.017
W W/°C
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER Max. Junction t...
Similar Datasheet