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UT4435-H

UTC

P-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT4435-H Preliminary -8.0A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT4435-...


UTC

UT4435-H

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Description
UNISONIC TECHNOLOGIES CO., LTD UT4435-H Preliminary -8.0A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state resistance. The UTC UT4435-H is suitable for load switching, POL, LED applications, etc.  FEATURES *RDS(ON) < 20mΩ @ VGS=-10V, ID=-8A RDS(ON) < 32mΩ @ VGS=-4.5V, ID=-5A * High switching speed * Low gate charge  SYMBOL Power MOSFET SOP-8  ORDERING INFORMATION Ordering Number UT4435G-S08-R Note: Pin Assignment: S: Source Package 1 SOP-8 S G: Gate D: Drain Pin Assignment 2345678 S SGDDDD Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-053.B UT4435-H Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage Drain Current Continuous TC=25°C TC=100°C Pulsed (Note 1) VGSS ID IDM ±20 -8 -5.1 -32 V A A A Power Dissipation TC=25°C Derate above 25°C PD 2.1 0.017 W W/°C Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS PARAMETER Max. Junction t...




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