UK3018BW

UNISONIC TECHNOLOGIES CO., LTD UK3018BW Preliminary 2.5V DRIVE SILICON N-CHANNEL MOSFET  DESCRIPTION The UTC UK3018BW is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage and low current applications such as small servo motor controllers, power MOSFET gate drivers, and other switching applications.  FEATURES * Min VDSS =30V * RDS(ON) < 5Ω @ VGS=4V * RDS(ON) < 7Ω @ VGS=2.5V * Pulsed ID = 400mA * Low voltage drive (2.5V)  EQUIVALENT CIRCUIT Power MOSFET  ORDERING INFORMATION Order Number UK3018BWG-AL5-R Package SOT-353 Pin Assignment 12345 Packing G1 S1S2 G2 D2 D1 Tape Reel UK3018BWG-AL5-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) AL5: SOT-353 (3) G: Halogen Free and Lead Free  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R209-031.a UK3018BW Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous Pulsed (Note 2) ID IDP 100 mA 400 mA Power Dissipation (Note 3) PD 200 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress...