OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...
OptiMOS™-T2 Power-
Transistor
Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)
IPG16N10S4L-61A
Product Summary VDS RDS(on),max3) ID
100 V 61 mW 16 A
PG-TDSON-8-10
Type IPG16N10S4L-61A
Package PG-TDSON-8-10
Marking 4N10L61
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
I D T C=25 °C, V GS=10 V
Pulsed drain current1) one channel active
Avalanche energy, single pulse1, 3) Avalanche current, single pulse3)
Gate source voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V1)
I D,pulse -
E AS I AS V GS
I D=8A -
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
16
11
64 33 10 ±16 29 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2014-06-30
IPG16N10S4L-61A
Parameter
Symbol
Conditions
Thermal characteristics1, 3)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area2)
min.
Values typ.
Unit max.
- - 5.2 K/W - 100 - 60 -
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Gate threshold voltage
V (BR)DSS V GS=0V, I D=1mA V GS(th) V DS=V GS, I D=9µA
100 -
-V
1.1 1.6 2.1
Zero gate voltage drain current3)
I DSS...
