Document
OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD90N08S4-05
Product Summary V DS R DS(on),max ID
80 V 5.3 mW 90 A
PG-TO252-3-313
Type IPD90N08S4-05
Package PG-TO252-3-313
Marking 4N0805
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=45A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value 90
90
360 240 75 ±20 144 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2014-06-20
IPD90N08S4-05
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.0 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=90µA
I DSS
V DS=80V, V GS=0V, T j=25°C
V DS=80V, V GS=0V, T j=125°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=90A
80 -
-V
2.0 3.0 4.0
- 0.01 1 µA
- 5 100
- - 100 nA - 4.5 5.3 mW
Rev. 1.0
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2014-06-20
IPD90N08S4-05
Parameter
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current2) Diode pulse current1)
Diode forward voltage
Reverse recovery time1)
Symbol
Conditions
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0V, V DS=25V, f =1MHz
V DD=40V, V GS=10V, I D=90A, R G=3.5W
Q gs Q gd Qg V plateau
V DD=64V, I D=90A, V GS=0 to 10V
IS I S,pulse
V SD
T C=25°C
V GS=0V, I F=90A, T j=25°C
t rr
V R=40V, I F=50A, di F/dt =100A/µs
min.
Values typ.
Unit max.
- 3600 4800 pF - 1400 1860 - 75 150 - 12 - ns -7- 20 - 23 -
- 19 24 nC - 11 23 - 52 68 - 5.2 - V
- - 90 A - - 360 - 0.95 1.3 V
- 93 - ns
Reverse recovery charge1)
Q rr
- 57 - nC
1) Current is limited by bondwire; with an R thJC = 1K/W the chip is able to carry 120A at 25°C.
2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-06-20
IPD90N08S4-05
1 Power dissipation P tot = f(T C); V GS ≥ 6 V
2 Drain current I D = f(T C); V GS = 10 V
150 100
P tot [W] I D [A]
125 80
100 60
75 40
50
20 25
0 0 50 100 T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
150
0 200 0 50 100 150
T C [°C]
4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
101
I D [A] Z thJC [K/W]
100 10
1 µs
10 µs
1 ms
100 µs
0.5
100
0.1 0.05
10-1
0.01 single pulse
200
1 0.1
Rev. 1.0
1 10 V DS [V]
10-2 100
page 4
t p [s]
2014-06-20
IPD90N08S4-05
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
360
10 V
7V
300
240
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS
12
5V
10
I D [A] R DS(on) [mW]
180 6 V
120
5.5 V
60 5 V
0 01234 V DS [V]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
360
5
8
5.5 V
6V
6
7V
4 60
10 V
30 60 I D [A]
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 90 A; V GS = 10 V
90
9
300
-55 °C 25 °C 175 °C
8
240 7
I D [A] R DS(on) [mW]
180 6
120 5
60 4
0 2.5 3.5 4.5 5.5 6.5 7.5
V GS [V]
3
-60 -20 20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2014-06-20
V GS(th) [V] C [pF]
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
3.5
3
900 µA
2.5
90 µA
2
1.5
IPD90N08S4-05
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
104
Ciss Coss
103
102 Crss
1 -60 -20 20 60 100 140 T j [°C]
11 Typical forward diode characteristicis IF = f(VSD) parameter: T j
103
101 180 0 10 20 30 40 50 60 70 80
V DS [V]
12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start)
100
102
25 °C 100 °C 150 °C
I F [A] I AV [A]
175 °C
175 °C2525°C°C
101
10
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
1 1
Rev. 1.0
page 6
10 100 t AV [µs]
1000
2014-06-20
IPD90N08S4-05
13 Avalanche energy E AS = f(T j)
14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA
E AS [mJ] V BR(DSS) [V]
1000
900
19 A
800
700
600
500
38 A
400
300 200 75 A
100
0 25 75 125
T j [°C]
15 Typ. gate charge V GS = f(Q gate); I D = 90 A pulsed parameter: .