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IPD90N08S4-05 Dataheets PDF



Part Number IPD90N08S4-05
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD90N08S4-05 DatasheetIPD90N08S4-05 Datasheet (PDF)

OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N08S4-05 Product Summary V DS R DS(on),max ID 80 V 5.3 mW 90 A PG-TO252-3-313 Type IPD90N08S4-05 Package PG-TO252-3-313 Marking 4N0805 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T .

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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N08S4-05 Product Summary V DS R DS(on),max ID 80 V 5.3 mW 90 A PG-TO252-3-313 Type IPD90N08S4-05 Package PG-TO252-3-313 Marking 4N0805 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=45A I AS - V GS - P tot T C=25°C T j, T stg - Value 90 90 360 240 75 ±20 144 -55 ... +175 Unit A mJ A V W °C Rev. 1.0 page 1 2014-06-20 IPD90N08S4-05 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 1.0 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=90µA I DSS V DS=80V, V GS=0V, T j=25°C V DS=80V, V GS=0V, T j=125°C2) I GSS V GS=20V, V DS=0V R DS(on) V GS=10V, I D=90A 80 - -V 2.0 3.0 4.0 - 0.01 1 µA - 5 100 - - 100 nA - 4.5 5.3 mW Rev. 1.0 page 2 2014-06-20 IPD90N08S4-05 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current1) Diode forward voltage Reverse recovery time1) Symbol Conditions C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=25V, f =1MHz V DD=40V, V GS=10V, I D=90A, R G=3.5W Q gs Q gd Qg V plateau V DD=64V, I D=90A, V GS=0 to 10V IS I S,pulse V SD T C=25°C V GS=0V, I F=90A, T j=25°C t rr V R=40V, I F=50A, di F/dt =100A/µs min. Values typ. Unit max. - 3600 4800 pF - 1400 1860 - 75 150 - 12 - ns -7- 20 - 23 - - 19 24 nC - 11 23 - 52 68 - 5.2 - V - - 90 A - - 360 - 0.95 1.3 V - 93 - ns Reverse recovery charge1) Q rr - 57 - nC 1) Current is limited by bondwire; with an R thJC = 1K/W the chip is able to carry 120A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-06-20 IPD90N08S4-05 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 2 Drain current I D = f(T C); V GS = 10 V 150 100 P tot [W] I D [A] 125 80 100 60 75 40 50 20 25 0 0 50 100 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 150 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 I D [A] Z thJC [K/W] 100 10 1 µs 10 µs 1 ms 100 µs 0.5 100 0.1 0.05 10-1 0.01 single pulse 200 1 0.1 Rev. 1.0 1 10 V DS [V] 10-2 100 page 4 t p [s] 2014-06-20 IPD90N08S4-05 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 360 10 V 7V 300 240 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS 12 5V 10 I D [A] R DS(on) [mW] 180 6 V 120 5.5 V 60 5 V 0 01234 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 360 5 8 5.5 V 6V 6 7V 4 60 10 V 30 60 I D [A] 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 90 A; V GS = 10 V 90 9 300 -55 °C 25 °C 175 °C 8 240 7 I D [A] R DS(on) [mW] 180 6 120 5 60 4 0 2.5 3.5 4.5 5.5 6.5 7.5 V GS [V] 3 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 5 2014-06-20 V GS(th) [V] C [pF] 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 3.5 3 900 µA 2.5 90 µA 2 1.5 IPD90N08S4-05 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 Ciss Coss 103 102 Crss 1 -60 -20 20 60 100 140 T j [°C] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 101 180 0 10 20 30 40 50 60 70 80 V DS [V] 12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start) 100 102 25 °C 100 °C 150 °C I F [A] I AV [A] 175 °C 175 °C2525°C°C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] 1 1 Rev. 1.0 page 6 10 100 t AV [µs] 1000 2014-06-20 IPD90N08S4-05 13 Avalanche energy E AS = f(T j) 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA E AS [mJ] V BR(DSS) [V] 1000 900 19 A 800 700 600 500 38 A 400 300 200 75 A 100 0 25 75 125 T j [°C] 15 Typ. gate charge V GS = f(Q gate); I D = 90 A pulsed parameter: .


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