IPC302NE7N3

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC302NE7N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC302NE7N3 1Description N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofIPP023NE7N3G AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlCusystem Passivation:nitride(onlyonedgestructure) Package:sawnonfoil PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 75 2.31) 6.7 x 4.5 V mΩ mm2 Thickness 175 µm Drain Gate Source Type/OrderingCode IPC302NE7N3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 75 2.3 - Values Typ. Max. -3.1 3.8 0.1 1 1 100 1.22) 1003) 0.9 1.2 404) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=270µA µA VGS=0V,VDS=75V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0...