IPC218N04N3

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC218N04N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC218N04N3 1Description N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofIPB011N04NG AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlCusystem Passivation:Nitride+Imide PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 40 1.11) 5.9 x 3.7 V mΩ mm2 Thickness 175 µm Drain Gate Source Type/OrderingCode IPC218N04N3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG EAS Min. 40 2 - Values Typ. Max. --4 0.1 2 2 200 0.52) 503) 0.86 1.1 1.5 - 5254) Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=200µA µA VGS=0V,VDS=40V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=...