MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC171N04N
DataSh...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
BareDie
OptiMOS™3PowerMOS
TransistorChip IPC171N04N
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOS
TransistorChip
IPC171N04N
1Description
N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofIPB021N04NG AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlSisystem Passivation:nitride(onlyonedgestructure)
PowerMOS
TransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS RDS(on) Die size
40 2.11) 5.9 x 2.95
V mΩ mm2
Thickness
205
µm
Drain
Gate Source
Type/OrderingCode IPC171N04N
Package Chip
Marking not defined
RelatedLinks -
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD
Min. 40 2.1 -
Values Typ. Max. -3.0 4.0 0.1 1 1 100 1.12) 1003) 1.0 1.3
Unit Note/TestCondition
V VGS=0V,ID=1mA V VDS=VGS,ID=150µA µA VGS=0V,VDS=40V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A
1) packaged in a P-TO263-7 (see ref. product) 2)...