IPC045N25N3

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC045N25N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC045N25N3 1Description N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofBSZ16DN25NS3 G AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoJEDEC Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlSisystem Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 250 1651) 2.5 x 1.8 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC045N25N3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 250 2 - Values Typ. Max. -34 0.1 1 1 100 1462) 1653) 0.9 1.2 - 1204) Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=32µA µA VGS=0V,VDS=200V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=5.5A V VGS=0V,IF=10.9A mJ ID =5.5 ...