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IPB180N10S4-03 Dataheets PDF



Part Number IPB180N10S4-03
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPB180N10S4-03 DatasheetIPB180N10S4-03 Datasheet (PDF)

OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-03 Product Summary VDS RDS(on) ID 100 V 3.3 mW 180 A PG-TO263-7-3 Type IPB180N10S4-03 Package PG-TO263-7-3 Marking 4N1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1.

  IPB180N10S4-03   IPB180N10S4-03


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