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SIR406DP Dataheets PDF



Part Number SIR406DP
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SIR406DP DatasheetSIR406DP Datasheet (PDF)

New Product N-Channel 25-V (D-S) MOSFET SiR406DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 25 0.0048 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 15.8 nC PowerPAK® SO-8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR406DP-T1-GE3 (Lead (Pb.

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New Product N-Channel 25-V (D-S) MOSFET SiR406DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 25 0.0048 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 15.8 nC PowerPAK® SO-8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR406DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • POL • Server • DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 25 ± 20 40g 40g 27b, c 21.6b, c 70 40g 4.5b, c 30 45 48 31 5.0b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 20 2.1 25 °C/W 2.6 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. g. Package Limited. Document Number: 64982 S09-1095-Rev. A, 15-Jun-09 www.vishay.com 1 SiR406DP Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A Forward Transconductancea gfs VDS = 15 V, ID = 15 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 10 A Gate-Source Charge Gate-Drain Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 10 A Qgd Gate Resistance Rg f = 1 MHz Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = 10 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Fall Time tf Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = 10 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Fall Time tf Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Currenta ISM Body Diode Voltage VSD IS = 3 A Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Qrr ta IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Min. 25 1.2 30 0.2 Typ. Max. Unit 24 - 5.3 0.0031 0.0039 85 2.4 ± 100 1 10 0.0038 0.0048 V mV/°C V nA µA A Ω S 2083 561 207 33 15.8 4.8 4.4 0.85 11 10 23 9 22 20 28 10 0.73 24 15 12 12 50 24 1.7 22 20 45 18 44 40 55 20 40 70 1.1 45 28 pF nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64982 S09-1095-Rev. A, 15-Jun-09 New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 10 VGS = 10 V thru 4 V 56 VGS = 3 V 42 8 6 SiR406DP Vishay Siliconix I D - Drain Current (A) I D - Drain Current (A) 28 14 0 0.0 0.0050 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.5 4 2 0 0 2800 TC = 25 °C TC = 125 °C TC = -.


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