Document
New Product
N-Channel 25-V (D-S) MOSFET
SiR406DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0038 at VGS = 10 V 25
0.0048 at VGS = 4.5 V
ID (A)a 40g 40g
Qg (Typ.) 15.8 nC
PowerPAK® SO-8
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested • 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
S 1S
5.15 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: SiR406DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS • POL • Server • DC/DC
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
25
± 20
40g 40g 27b, c 21.6b, c 70
40g 4.5b, c
30
45
48
31 5.0b, c 3.2b, c - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t ≤ 10 s Steady State
RthJA RthJC
20 2.1
25 °C/W 2.6
Notes:
a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. g. Package Limited.
Document Number: 64982 S09-1095-Rev. A, 15-Jun-09
www.vishay.com 1
SiR406DP
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient VGS(th) Temperature Coefficient
ΔVDS/TJ ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 10 A
Gate-Source Charge Gate-Drain Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 10 A Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = 10 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = 10 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Min. 25 1.2 30
0.2
Typ.
Max.
Unit
24 - 5.3
0.0031 0.0039
85
2.4 ± 100
1 10
0.0038 0.0048
V mV/°C
V nA µA A Ω S
2083 561 207 33 15.8 4.8 4.4 0.85 11 10 23
9 22 20 28 10
0.73 24 15 12 12
50 24
1.7 22 20 45 18 44 40 55 20
40 70 1.1 45 28
pF
nC Ω
ns
A V ns nC ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
www.vishay.com 2
Document Number: 64982 S09-1095-Rev. A, 15-Jun-09
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70 10
VGS = 10 V thru 4 V 56
VGS = 3 V 42
8 6
SiR406DP
Vishay Siliconix
I D - Drain Current (A)
I D - Drain Current (A)
28
14
0 0.0
0.0050
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V) Output Characteristics
2.5
4 2 0
0
2800
TC = 25 °C
TC = 125 °C
TC = -.