SIGC42T170R3GE

SIGC42T170R3GE IGBT3 Power Chip Features:  1700V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power module Applications:  drives C G E Chip Type VCE ICn SIGC42T170R3GE 1700V 29A Die Size 6.5 x 6.46 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.5 x 6.46 4.27 x 4.27 1.18 x 1.09 mm2 42 / 28.7 190 µm 200 mm 641 pcs Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm  0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IFAG IPC TD VLS, L7751M, L7751T, L7751E, Rev 1.0, 27.06.2014 MAXIMUM RATINGS SIGC42T170R3GE Parameter Symbol Value Unit Collector-Emitter voltage, T =25 C j DC collector current, limited by Tj max VCE IC 1700 1) V A Pulsed collector current, tp limited by Tj max Ic,puls 87 A Gate emitter voltage VGE 20 V Maximum junction and storage temperature Tvj,max , Tstg -55 ... +150 °C Short circuit data 2 ) VGE = 15V, VCC = 1200V, Tvj = 125°C tp,max 10 µs Reverse bias safe operating area 2 ) (RBSOA) 1...