IGBT
SIGC158T120R3LE
IGBT3 Power Chip
Features: 1200V Trench & Field Stop technology low turn-off losses short tail c...
Description
SIGC158T120R3LE
IGBT3 Power Chip
Features: 1200V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type
VCE
IC
Die Size
SIGC158T120R3LE 1200V 150A 12.56 x 12.56 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
12.56 x 12.56
8 x (5.423 x 2.641) 1.320 x 0.821
mm2
157.8
120 µm
200 mm
156
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7698N, L7698U, L7698F, Rev 2.1, 02.07.2014
SIGC158T120R3LE
Maximum Ratings Parameter
Symbol
Value
Unit
Collector-Emitter voltage, Tvj =25 C DC collector current, limited by Tvj max
VCE IC
1200
1)
V A
Pulsed collector current, tp limited by Tvj max
Ic,puls
450 A
Gate emitter voltage
VGE
20 V
Junction temperature range Operating junction temperature Short circuit data 2 ) VGE = 15V, VCC = 900V, Tvj = 125°C
Tvj Tvj tSC
-55 ... +175 -55...+150
10
°C C µs
Rev...
Similar Datasheet
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