SIGC12T120LE

SIGC12T120LE IGBT3 Power Chip Features:  1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power module Applications:  drives C G E Chip Type SIGC12T120LE VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 3.54 x 3.5 2.028 x 2.028 1.107 x 0.702 mm2 12.39 / 6.82 120 µm 200 mm 2243 pcs Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm  0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621N, L7621U, L7621F, Rev 1.0, 27.06.2014 MAXIMUM RATINGS SIGC12T120LE Parameter Symbol Value Unit Collector-Emitter voltage, T =25 C j DC collector current, limited by Tj max VCE IC 1200 1) V A Pulsed collector current, tp limited by Tj max Ic,puls 24 A Gate emitter voltage VGE 20 V Maximum junction and storage temperature Tvj,max , Tstg -55 ... +150 °C Short circuit data 2 ) VGE = 15V, VCC = 900V, Tvj = 125°C tp,max 10 µs Reverse bias safe operating area 2 ) (RBSOA) 1 ...