SI4228DY

New Product Dual N-Channel 25 V (D-S) MOSFET Si4228DY Vishay Siliconix # PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.018 at VGS = 10 V 0.020 at VGS = 4.5 V 0.024 at VGS = 2.5 V ID (A)a, e 8 8 7.5 Qg (Typ.) 7.8 nC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck Converter DC/DC Converter D1 D2 G1 G2 Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg S1 N-Channel MOSFET Limit 25 ± 12 8e 8e 8b, c, e 6.9b, c 50 2.6 1.7b, c 15 11.25 3.1 2 2b, c 1.3b, c - 55 to 150 S2 N-Channel MOSFET Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state ...