SI4164DY

New Product N-Channel 30-V (D-S) MOSFET Si4164DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V ID (A)a 30 26.3 Qg (Typ.) 26.5 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4164DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS DC/DC Conversion - Low-Side Switch Notebook PC Gaming D G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 30 22.6 21.5b, c 17.1b, c 70 5.4 2.7b, c 40 80 6.0 3.3 3.0b, c 1.9b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Symbol RthJA RthJF Typical 33 16 Maximum 42 21 Unit V A mJ W °C Unit °C/W Document Number: 68870 S-82015-Rev. ...