MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO.,LTD
MGBR12L30
Preliminary
MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR12L30 is a...
Description
UNISONIC TECHNOLOGIES CO.,LTD
MGBR12L30
Preliminary
MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR12L30 is a surface mount mos gatedbarrier rectifier,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.
FEATURES
* Low forward voltage drop * High switching speed
SYMBOL
DIODE
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR12L30L-T27-R
MGBR12L30G-T27-R
Note: Pin Assignment: A: Anode K: Common Cathode
Package TO-277
Pin Assignment 123 AKA
MGBR12L30L-T27-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) T27: TO-227
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
Packing Tape Reel
MARKING INFORMATION
PACKAGE
TO-277
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R601-230.a
MGBR12L30
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS(TA=25°C, unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load,derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage WorkingPeak Reverse Voltage
VRM VRWM
30 30
V V
Peak Repetitive Reverse Voltage RMS Reverse Voltage
VRRM VR(RMS)
30 21
V V
Average Rectified Output Current
TC=140°C
IO
12 A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
200
A
Repetitive Peak Avalanche Power (1μs, 25°C) Operating Junction Temperature
PARM TJ
5000 -65~+150
W °C
St...
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