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IPD180N10N3G

Infineon
Part Number IPD180N10N3G
Manufacturer Infineon
Description Power-Transistor
Published Feb 14, 2016
Detailed Description IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
Datasheet PDF File IPD180N10N3G PDF File

IPD180N10N3G
IPD180N10N3G

Overview
IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max TO-263 ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPD180N10N3 G 100 V 18 mW 43 A Package Marking PG-TO252-3 180N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T...


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