MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,120V
OptiMOS™3Power-Transistor IPD...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
OptiMOS™Power-
Transistor,120V
OptiMOS™3Power-
Transistor IPD_S110N12N3G
DataSheet
Rev.2.4 Final
Industrial&Multimarket
OptiMOSTM3Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Halogen free according to IEC61249-2-21 *
Ideal for high-frequency switching and synchronous rectification
Type
IPS110N12N3 G IPD110N12N3 G
IPD110N12N3 G IPS110N12N3 G
120 V 11 mΩ 75 A
Package
PG-TO251-3
PG-TO252-3
Marking
110N12N
110N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse Gate source voltage3)
E AS V GS
I D=75 A, R GS=25 Ω
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
* Except package TO251-3
Rev. 2.4
page 1
Value
75 54 300 120 ±20 136 -55 ... 175 55/175/56
Unit A
mJ V W °C
2015-06-24
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
R thJC R thJA
minimal footprint 6 cm...