IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO 252) ID
100 V 8.2 mW 80 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according...
