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HWL27YRA

Hexawave
Part Number HWL27YRA
Manufacturer Hexawave
Description L-Band GaAs Power FET
Published Feb 14, 2016
Detailed Description Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation Desc...
Datasheet PDF File HWL27YRA PDF File

HWL27YRA
HWL27YRA

Overview
Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation Description The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.
It is presently offered in low cost ceramic package.
Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT* Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation * mounted on an infinite heat sink +15V -5V IDSS 2mA 175°C -65 to +175°C 3.
5W HWL27YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions RA Package (Ceramic) Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests Symbol...


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