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HWL23NPB Dataheets PDF



Part Number HWL23NPB
Manufacturers Hexawave
Logo Hexawave
Description L-Band GaAS Power FET
Datasheet HWL23NPB DatasheetHWL23NPB Datasheet (PDF)

Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Description The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Outline Dimensions 1 23 Pin 1: Source Pin 2: Gate Pin 3: Drain Absolute Maximum Ratings VDS Drain to Source Voltage .

  HWL23NPB   HWL23NPB



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Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Description The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Outline Dimensions 1 23 Pin 1: Source Pin 2: Gate Pin 3: Drain Absolute Maximum Ratings VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 1mA TCH Channel Temperature 150°C TSTG Storage Temperature -65 to +150°C PT Power Dissipation 0.7 Watt PB Package (SOT-23) Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests Symbol Parameters & Conditions Units Min. IDSS Saturated Current at VDS=5V, VGS=0V mA 90 VP Pinch-off Voltage at VDS=5V, ID=5.5mA V -3.5 gm Transconductance at VDS=5V, ID=55mA mS - Rth Thermal Resistance °C/W - P1dB G1dB Power Output at Test Points VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS dBm dB 16.5 19.5 PAE Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS %- Typ. 110 -2.0 60 200 17.5 21.0 13.0 14.0 35.0 45.0 Max. - -1.5 - - - - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. Typical Performance at 25°C Output Power & Efficiency vs Vds @ f=0.9GHz,Ids=55mA Po (dBm) 22 20 18 16 14 12345 HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 PAE (%) 60 50 40 Po PAE 30 20 10 0 6 Vds (V) Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=55mA Po (dBm) 22 PAE (%) 60 50 20 40 Po PAE 18 30 20 16 10 14 0 1 2 3 4 5 6 Vds (V) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V Po (dBm) PAE (%) 20 60 15 10 Gain 5 50 40 Po Gain 30 Eff 20 10 00 -8 -4 0 4 8 12 Pin (dBm) Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V Po (dBm) PAE (%) 20 60 15 10 Gain 5 50 40 Po Gain 30 Eff 20 10 00 -8 -4 0 4 8 12 16 Pin (dBm) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=5V Po (dBm) PAE (%) 25 60 20 15 Gain 10 5 50 40 Po Gain 30 Eff 20 10 00 -8 -4 0 4 8 12 Pin (dBm) Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=5V Po (dBm) PAE (%) .


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