Features
• Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless
Applications • High Efficiency • 3V to 6V Operation
Description
The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Outline Dimensions
1 23
Pin 1: Source Pin 2: Gate Pin 3: Drain
Absolute Maximum Ratings
VDS Drain to Source Voltage
+7V
VGS Gate to Source Voltage
-5V
ID Drain Current
IDSS
IG Gate Current
1mA
TCH Channel Temperature
150°C
TSTG Storage Temperature
-65 to +150°C
PT Power Dissipation
0.7 Watt
PB Package (SOT-23)
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
IDSS Saturated Current at VDS=5V, VGS=0V
mA 90
VP Pinch-off Voltage at VDS=5V, ID=5.5mA
V -3.5
gm Transconductance at VDS=5V, ID=55mA
mS -
Rth Thermal Resistance
°C/W
-
P1dB G1dB
Power Output at Test Points VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS
Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS
dBm dB
16.5 19.5
PAE
Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS
%-
Typ. 110 -2.0 60 200
17.5 21.0
13.0 14.0
35.0 45.0
Max. -
-1.5 -
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email:
[email protected] All specifications are subject to change without notice.
Typical Performance at 25°C Output Power & Efficiency vs Vds @ f=0.9GHz,Ids=55mA
Po (dBm) 22
20
18
16
14 12345
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
PAE (%) 60 50 40 Po PAE 30 20 10 0
6 Vds (V)
Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=55mA
Po (dBm) 22
PAE (%) 60
50 20
40 Po
PAE 18 30
20 16
10
14 0 1 2 3 4 5 6 Vds (V)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email:
[email protected] All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
Po (dBm)
PAE (%)
20 60
15
10 Gain
5
50 40 Po
Gain 30 Eff
20
10
00 -8 -4 0 4 8 12 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
Po (dBm)
PAE (%)
20 60
15
10 Gain
5
50 40 Po
Gain 30 Eff
20
10
00
-8 -4
0
4
8 12 16 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email:
[email protected] All specifications are subject to change without notice.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V
Po (dBm)
PAE (%)
25 60
20
15 Gain
10
5
50 40 Po
Gain 30 Eff
20
10
00 -8 -4 0 4 8 12 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V
Po (dBm)
PAE (%)
.