SI4128BDY

New Product N-Channel 30 V (D-S) MOSFET Si4128BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.021 at VGS = 10 V 30 0.033 at VGS = 4.5 V ID (A) 12a 6 Qg (Typ.) 3.7 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook System Power Low Current DC/DC S1 S2 S3 G4 SO-8 8D 7D 6D 5D D G Top View Ordering Information: Si4128BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 25 12a 9.7 8.3b, c 6.7b, c 40 4.2 2b, c 10 5 5 3.2 2.4b, c 1.5b, c - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t  10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. Symbol RthJA RthJF Typical 42 19 ...