SI1428EDH

New Product N-Channel 30 V (D-S) MOSFET Si1428EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.045 at VGS = 10 V 0.049 at VGS = 4.5 V 0.060 at VGS = 2.5 V ID (A)a 4 4 4 Qg (Typ.) 4 nC SOT-363 SC-70 (6-LEADS) D1 6D D2 G3 5D 4S Top View Marking Code YY AS XX Lot Traceability and Date Code Part # Code Ordering Information: Si1428EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Typical ESD Protection 2000 V HBM 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Portable Devices - Load Switch - Battery Switch Load Switch for Motors, Relays and Solenoids R G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 30 ± 12 4a 4a 4a, b, c 3.7b, c 20 2.3a 1.3b, c 2.8 1.8 1.56b, c 1.0b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t5s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited, TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d...