SI1416EDH

New Product N-Channel 30 V (D-S) MOSFET Si1416EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.058 at VGS = 10 V 0.064 at VGS = 4.5 V 0.077 at VGS = 2.5 V ID (A)a 3.9 3.9 3.9 Qg (Typ.) 3.5 nC SOT-363 SC-70 (6-LEADS) D1 6D D2 G3 5D 4S Top View Marking Code YY AR XX Lot Traceability and Date Code Part # Code Ordering Information: Si1416EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Typical ESD Protection 1500 V in HBM 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Portable Devices such as Smart Phones and Tablet PCs - DC/DC Converters - High Frequency Switching D - OVP Switch - Load Switch G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 30 ± 12 3.9a 3.9a 3.9a, b, c 3.9a, b, c 15 2.3a 1.3b, c 2.8 1.8 1.56b, c 1.0b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t≤5s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package li...