IKB01N120H2

IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A P-TO-220-3-45 Qualified according to JEDEC2 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKB01N120H2 VCE 1200V IC 1A Eoff 0.09mJ Tj 150°C Marking Package K01H1202 P-TO-220-3-45 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) Symbol VCE IC ICpuls - IF VGE Ptot Tj , Tstg - Value 1200 3.2 1.3 3.5 3.5 Unit V A 3.2 1.3 ±20 28 -40...+150 220 V W °C 2 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.3 May 06 IKB01N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, Junction - case Thermal resistance, junction – ...