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D12V0H1U2LP Dataheets PDF



Part Number D12V0H1U2LP
Manufacturers Diodes
Logo Diodes
Description 1 CHANNEL UNIDIRECTIONAL TVS
Datasheet D12V0H1U2LP DatasheetD12V0H1U2LP Datasheet (PDF)

ADVANACDEVDAINNCFEO IRNMFAOTIROMNATION D12V0H1U2LP 1 CHANNEL UNIDIRECTIONAL TVS Product Summary Features VBR Min 13.3V IPP Max 13A CT Typ 80pF Description This new generation TVS is designed to protect sensitive electronics from damage due to ESD. The combination of small-size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Applications  Cellular Handsets  Portable Electronics  Computers and Perip.

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ADVANACDEVDAINNCFEO IRNMFAOTIROMNATION D12V0H1U2LP 1 CHANNEL UNIDIRECTIONAL TVS Product Summary Features VBR Min 13.3V IPP Max 13A CT Typ 80pF Description This new generation TVS is designed to protect sensitive electronics from damage due to ESD. The combination of small-size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Applications  Cellular Handsets  Portable Electronics  Computers and Peripherals  Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.1mm x 0.7mm Max) Suitable for Compact Portable Electronics  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  One Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.  https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: X1-DFN1006-2 with Sidewall Plating  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.001 grams (Approximate) X1-DFN1006-2 Pin 2 Pin 1 Bottom View Device Schematic Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D12V0H1U2LP-7B Standard Q2 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Q2 Q2 = Product Type Marking Code Bar Denotes Pin 1 or Cathode Side D12V0H1U2LP Document number: DS36751 Rev. 4 - 2 1 of 5 www.diodes.com October 2019 © Diodes Incorporated ADVANACDEVDAINNCFEO IRNMFAOTIROMNATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Peak Pulse Power Dissipation Peak Pulse Current ESD Protection—Contact Discharge ESD Protection—Air Discharge Symbol PPP IPP VESD_CONTACT VESD_AIR Value 300 13 ±30 ±30 D12V0H1U2LP Unit W A kV kV Conditions 8/20µs, per Figure 3 8/20µs, per Figure 3 IEC 61000-4-2 Standard IEC 61000-4-2 Standard Thermal Characteristics Characteristic Package Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD RϴJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage Reverse Current (Note 6) Reverse Breakdown Voltage Reverse Clamping Voltage Capacitance VRWM IR VBR VCL CT — — 13.3 — — — — 12.0 V— 2 50 nA VR = VRWM = 12.0V — 15.75 V IR = 1mA — — 19 23 V IPP = 5A, tP = 8/20μs IPP = 13A, tP = 8/20μs 80 95 pF VR = 0V, f = 1MHz Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated’s suggested pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect. D12V0H1U2LP Document number: DS36751 Rev. 4 - 2 2 of 5 www.diodes.com October 2019 © Diodes Incorporated PD, POWER DISSIPATION (mW) ADVANACDEVDAINNCFEO IRNMFAOTIROMNATION 250 225 200 175 150 125 100 75 50 25 0 0 Note 5 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 1 Power Derating Curve 175 100 PEAK PULSE DERATING % OF PEAK POWER OR CURRENT D12V0H1U2LP 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Figure 2 Pulse Derating Curve 100 f = 1MHz 80 CT, TOTAL CAPACITANCE (pF) IPP, PEAK PULSE CURRENT (%Ipp) 60 50 40 0 0 20 40 60 t, TIME (s) Figure 3 Typical 8 x 20 Pulse Waveform IF, INSTANTANEOUS FORWARD CURRENT (mA) )A m NT( 100 RE R U C TA = 150°C D R WA 10 R TA = 125°C O F TA = 85°C S U O NE 1 TA = 25°C NTA TA S N TA = -55°C ,I I F 0.1 300 400 500 600 700 800 900 1000 1100 VF , INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 5 Typical Forward Characteristics 20 0 0 10 IR, LEAKAGE CURRENT (nA) A) NT(n RE R U C GE 1 EAKA L , I R 5 10 VR, REVERS.


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