Features
� 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate Charge(34nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability
SFF10N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimiz...
