Dual N-Channel MPSFET
New Product
SiZ902DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.)
Ch...
Description
New Product
SiZ902DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.)
Channel-1
0.0120 at VGS = 10 V 30
0.0145 at VGS = 4.5 V
Channel-2
0.0064 at VGS = 10 V 30
0.0083 at VGS = 4.5 V
ID (A) 16a 16a 16a 16a
Qg (Typ.) 6.8 nC
21 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Notebook System Power POL Synchronous Buck Converter
PowerPAIR® 6 x 5
Pin 1
1
G2
8 7
S1/D2 Pin 9 S2
6 5
G1 D1
5 mm
2 D1
D1 3
D1
4
6 mm
Ordering Information: SiZ902DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1 MOSFET
G2
N-Channel 2 MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
30
± 20
16a 16a 16a 16a
14.3b, c 11.4b, c
16a, b, c 16a, b, c
50 16a
3.4b, c
80 16a 4.1b, c
18 30
16 45
29 66
18 42
4.2b, c 2.7b, c
5b, c 3.2b, c...
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