SIZ728DT

New Product N-Channel 25 V (D-S) MOSFETs SiZ728DT Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0077 at VGS = 10 V Channel-1 25 0.0110 at VGS = 4.5 V Channel-2 25 0.0035 at VGS = 10 V 0.0048 at VGS = 4.5 V ID (A) 16a 16a 35a 35a Qg (Typ.) 8.1 nC 20.5 nC PowerPAIR® 6 x 3.7 Pin 1 G1 1 2 D1 3.73 mm D1 D1 3 G2 6 S2 5 S1/D2 (Pin 7) S2 4 6 mm Ordering Information: SiZ728DT-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS System Power - Notebook - Server POL Synchronous Buck Converter D1 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 25 ± 20 16a 35a 16a 35a 16a, b, c 14.2b, c 28.8b, c 23b, c 70 16a 3.2b, c 100 35a 3.8b, c 18 30 16 45 27 48 17 31 3.9b, c 2.5b, c 4.6b, c 3b, c -...