N-Channel MOSFET
New Product
N-Channel 25 V (D-S) MOSFETs
SiZ728DT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0077 at VG...
Description
New Product
N-Channel 25 V (D-S) MOSFETs
SiZ728DT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0077 at VGS = 10 V Channel-1 25
0.0110 at VGS = 4.5 V
Channel-2 25 0.0035 at VGS = 10 V 0.0048 at VGS = 4.5 V
ID (A) 16a 16a 35a 35a
Qg (Typ.) 8.1 nC
20.5 nC
PowerPAIR® 6 x 3.7
Pin 1
G1 1
2 D1
3.73 mm D1
D1 3
G2 6 S2
5
S1/D2 (Pin 7) S2
4
6 mm
Ordering Information: SiZ728DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
System Power - Notebook - Server
POL Synchronous Buck Converter
D1
G1
N-Channel 1 MOSFET
S1/D2
G2
N-Channel 2 MOSFET S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
25
± 20 16a 35a 16a 35a
16a, b, c 14.2b, c
28.8b, c 23b, c
70 16a 3.2b, c
100
35a 3.8b, c
18 30
16 45
27 48
17 31
3.9b, c 2.5b, c
4.6b, c 3b, c
-...
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