SIZ342DT

www.vishay.com SiZ342DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY Channel-1 and Channel-2 VDS (V) 30 RDS(on) (Ω) MAX. 0.0115 at VGS = 10 V 0.0153 at VGS = 4.5 V ID (A) 30 a 27.5 Qg (Typ.) 4.5 nC PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View Ordering Information: SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES PowerPAIR® optimizes high-side and low-side MOSFETs for synchronous buck converters TrenchFET® Gen IV power MOSFETs 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous buck - Battery charging - Computer system power - Graphic cards POL D1 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER CHANNEL-1 AND CHANNEL-2 SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage TC = 25 °C VGS +20 / -16 30 a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID 26.5 15.6 b, c 12.4 b, c Pulsed Drain Current (t = 100 μs) IDM 100 Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS 13.9 3.1 b, c Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS 10 5 TC = 25 °C 16.7 Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C PD 10.7 3.7 b, c 2.4 b, c Operating Junction and Storage Temperature Range Soldering Recomm...