SIS782DN

SiS782DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) () 0.0095 at VGS = 10 V 30 0.0120 at VGS = 4.5 V ID (A)e 16 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 3.30 mm S 1S 3.30 mm 2 S 3 G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiS782DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook PC - System Power, Memory Buck Converter Synchronous Rectifier Switch D G N-Channel MOSFET Schottky Diode S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS VGS 30 ± 20 V TC = 25 °C 16e Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 16e 14.5a, b Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TA = 70 °C TC = 25 °C TA = 25 °C IDM IS 11.5a, b 50 16e 4a, b A Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C IAS EAS 15 11.25 41 mJ Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 26 3.6a, b W TA = 70 °C 2.3a, b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg - 50 to 150 260 °C Note...