SIR774DP

New Product SiR774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.0026 at VGS = 10 V 0.0034 at VGS = 4.5 V ID (A)a 40 40 PowerPAK® SO-8 Qg (Typ.) 28.5 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View FEATURES Halogen-free According to IEC 61249-2-21 Definition SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS VRM, POL, Server Notebook - Low-Side - Vcore - Memory D Schottky Diode G Ordering Information: SiR774DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.1 mH VDS VGS ID IDM IS IAS EAS Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 30 ± 20 40a 40a 32b, c 25.6b, c 80 40a 8b, c 30 45 62.5 40 5b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drai...