N-Channel MOSFET
www.vishay.com
SiR472ADP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () MAX. 0...
Description
www.vishay.com
SiR472ADP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () MAX. 0.0090 at VGS = 10 V 0.0115 at VGS = 4.5 V
ID (A) a, g 18 18
Qg (TYP.) 9 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information: SiR472ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES TrenchFET® Gen IV power MOSFET
100 % Rg and UIS tested Optimized for high-side switching in
synchronous buck converters
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS DC/DC conversion Battery protection Load switching DC/AC inverters
D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
TC = 25 °C
VDS VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IDM IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.3 mH TC = 25 °C
IAS EAS
Maximum Power Dissipation
TC = 70 °C TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
LIMIT 30 ± 20 18 g 18 g
14.2 b, c 11.3 b, c
80 13.3 g 3 b,c
8.2 10 14.7 9.4 3.3 b, c 2.1 b, c -55 to 150 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UN...
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