MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD
MGBR10U50
Preliminary
MOS GATED BARRIER RECTIFIER
DIODE
DESCRIPTION
The UTC MGBR10...
Description
UNISONIC TECHNOLOGIES CO., LTD
MGBR10U50
Preliminary
MOS GATED BARRIER RECTIFIER
DIODE
DESCRIPTION
The UTC MGBR10U50 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high current capability, etc.
The UTC MGBR10U50 suitable for free wheeling, high frequency inverters, polarity protection, and low voltage.
FEATURES
* Ultra low forward voltage drop * High current capability * High surge capability * High efficiency
SYMBOL
21 AK
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR10U50L-TA2-T
MGBR10U50G-TA2-T
Note: Pin Assignment: A: Anode K: Cathode
Package TO-220-2
Pin Assignment 12 KA
Packing Tube
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R601-128.b
MGBR10U50
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage (Note 1)
VRM 50 V
Working Peak Reverse Voltage Peak Repetitive Reverse Voltage
VRWM VRRM
50 50
V V
RMS Reverse Voltage Average Rectified Output Current
TC=125°C
VR(RMS) IO
35 10
V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
180
A
Repetitive Peak Avalanche Power (1μs, 25°C)
PARM
5000
W
Operating Junction Temperature Storage Temper...
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