Document
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™ThinkPAK8x8
650VCoolMOS™E6PowerTransistor IPL65R420E6
DataSheet
Rev.2.1 Final
Industrial&Multimarket
650VCoolMOS™E6PowerTransistor
IPL65R420E6
1Description
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™E6series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whileofferinganextremelyfastandrobustbodydiode.Thiscombination ofextremelylowswitching,commutationandconductionlossestogether withhighestrobustnessmakeespeciallyresonantswitchingapplications morereliable,moreefficient,lighter,andcooler. ThinPAK ThinPAKisanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns.
Features
•Reducedboardspaceconsumption •Increasedpowerdensity •Shortcommutationloop •Smoothswitchingwaveform •easytouseproducts •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Pb-freeplating,Halogenfree •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCDTV,Lighting,Server,Telecom.
ThinPAK8x8
Drain Pin 5
Gate Pin 1
Driver Source
Pin 2
Power
Source
Pin 3,4
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj max
700
V
RDS(on),max
0.42
Ω
Qg,typ
39
nC
ID,pulse
26
A
Eoss @ 400V
2.8
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode IPL65R420E6
Package PG-VSON-4
Marking 65E6420
RelatedLinks see Appendix A
Final Data Sheet
2 Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R420E6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3 Rev.2.1,2014-03-07
650VCoolMOS™E6PowerTransistor
IPL65R420E6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter Continuous drain current 1)
Symbol ID
Pulsed drain current 2)
Avalanche energy, single pulse
Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage
ID‚pulse
EAS
EAR IAR dv/dt VGS
Operating and storage temperature Continuous diode forward current Diode pulse current Reverse diode dv/dt 3) Maximum diode commutation speed Power dissipation
Tj‚Tstg IS IS‚pulse dv/dt dif/dt Ptot
Min.
-20 -30 -40
Values Typ. Max.
10.1 6.4 26
215
0.32 1.8 50 20 30 150 8.7 26 15 500 83
Unit Note/TestCondition
A TC=25°C TC=100°C
A TC=25°C
mJ
ID=1.8A,VDD=50V (see table 10)
mJ ID=1.8A,VDD=50V
A
V/ns VDS=0...480V
V static
AC (f > 1 Hz)
°C
A TC=25°C A TC=25°C
V/ns A/µs W
VDS=0...400V,ISD.