IPL65R1K5C6S

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C6PowerTransistor IPL65R1K5C6S 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, TelecomandUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. ThinPAK5x6 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss@400V 700 1.5 11 8.4 1.15 V Ω nC A µJ Body diode di/dt 500 A/µs Type/Orderin...