IGBT
IKB10N60T
TRENCHSTOP™ Series
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recove...
Description
IKB10N60T
TRENCHSTOP™ Series
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners TRENCHSTOP™ technology for 600V applications offers :
- very tight parameter distribution - high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO263-3
Type IKB10N60T
VCE 600V
IC 10A
VCE(sat),Tj=25°C 1.5V
Tj,max Marking Code
175C
K10T60
Package PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature (reflow soldering, MSL1)
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Similar Datasheet
- IKB10N60T IGBT - Infineon