SUD25N15-52

SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.052 at VGS = 10 V 0.060 at VGS = 6 V ID (A) 25 23 TO-252 FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D Drain Connected to Tab GDS Top View Ordering Information: SUD25N15-52-E3 (Lead (Pb)- free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAR Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAR Maximum Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 150 ± 20 25 14.5 50 25 25 31 136b 3a - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. t ≤ 10 s Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit °C/W Document Number: 71768 S09-1501-Rev. D, 10-Aug-09 www.vishay.com 1 SUD25N15-52 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown ...