SIR662DP

www.vishay.com SiR662DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 0.0027 at VGS = 10 V 0.0033 at VGS = 6 V 0.0048 at VGS = 4.5 V ID (A) a 100 PowerPAK® SO-8 Single D D8 D7 D6 5 Qg (TYP.) 27.5 nC 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR662DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Low Qg for high efficiency Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Primary side switch POL Synchronous rectifier DC/DC converter Amusement system Industrial LED backlighting D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (60 μs Pulse Width) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 60 ± 20 100 a 100 a 35.8 b, c 28.6 b, c 350 94 5.6 b, c 40 80 104 66.6 6.25 b ,c 4 b,c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM ...