Power MOSFET
Power MOSFET
IRFZ10, SiHFZ10
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()
VGS = 10 V
Qg (Max.) (nC) Qg...
Description
Power MOSFET
IRFZ10, SiHFZ10
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()
VGS = 10 V
Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
11 3.1 5.8 Single
0.20
TO-220AB
D
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current
TC = 25 °C VGS at 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive r...
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