Document
Si Photodiode
For Visible to Near IR range
QY-S1010NP
Features
High sensitivity
High cost performance
Applications
Optical equipments Analytical instruments Measurements equipments
Maximum ratings (Typ. Ta=25℃)
Item
Symbol
Rating
Reverse voltage
VR 5
Chip Size
S 10*10
Operating temperature.
Topr.
-20~+80
Storage temperature.
Tstg.
-30~+120
Soldering temp. *
Tsol.
260
For MAX 5 seconds at the position of 2mm from the package
Unit V
mm2
℃ ℃ ℃
Electro-optical characteristics (Typ. Ta=25℃)
Item Open circuit voltage Short circuit current Dark current Terminal Capacitance Spectral sensitivity Peak wavelength
Symbol VOC ISC Id Ct λ λp
Conditions EV=100Lx
2856K
VR= -1V V=0V,f=10KHz
Min. 400
Typ. 0.3 55 120 20
940
Max. 1100
Unit V μA nA nF nm nm
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Tel:8621-51198458
QYTECH
Si Photodiode
Spectral response
Short Circuit current Vs. Illuminance
PHOTO SENSITIVITY (A/W)
0.6 0.5 0.4 0.3 0.2 0.1
0 200
(Typ. Ta=25 OC)
400 600 800 1000
WAVELENGTH (nm)
1200
Dark Current Vs. Ambient Temperature
Dark current (nA)
10000
(VR=-1V)
1000
100
10
1
0.1 -20
0 20 40 60 80
Ambient Temperature (oC)
100
Dark current (nA)
short circuit current (uA)
1000
(Typ. Ta=25 OC)
100
10
1
0.1 1
10 100 1000
Illuminance (LX)
10000
Dark Current Vs. Reverse Voltage
(Typ Ta=25oC) 1000
100
10
1 0.01
0.1 1
10
Reverse Voltage (V)
100
http://www.qingyuetech.com
Tel:8621-51198458
QYTECH
Si Photodiode
■ (MM)
2-φ0.5
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http://www.qingyuetech.com
Tel:8621-51198458
QYTECH
.