www.vishay.com
SUM90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
...
www.vishay.com
SUM90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.0033 at VGS = 10 V 40
0.0041 at VGS = 4.5 V
ID (A) d 90 90
Qg (TYP.) 87
TO-263
FEATURES TrenchFET® Power MOSFET
100 % Rg and UIS tested Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
Power supply
- Secondary synchronous rectification
DC/DC converter
Power tools
G
D
Top View
S D G
Ordering Information: SUM90N04-3m3P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs)
TC = 25 °C TC = 70 °C
Avalanche Current
Single Avalanche Energy a
L = 0.1 mH
Maximum Power Dissipation a Operating Junction and Storage Temperature Range
TC = 25 °C TA = 25 °C c
VDS VGS
ID
IDM IAS EAS
PD
TJ, Tstg
LIMIT 40 ± 20 90 d 90 d 160 60 180
125 b 3.1
-55 to 150
S N-Channel MOSFET
UNIT V
A mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited.
SYMBOL RthJA RthJC
LIMIT 40 1
UNIT °C/W
S13-2462-Rev. B, 02-Dec-13
1
Document Number: 63397
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTIC...
