SIS892DN

N-Channel 100 V (D-S) MOSFET SiS892DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.029 at VGS = 10 V 0.042 at VGS = 4.5 V PowerPAK 1212-8 ID (A)f 30g 25 Qg (Typ.) 6.7 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View APPLICATIONS DC/DC Primary Side Switch Telecom/Server 48 V DC/DC Converter G D S Ordering Information: SiS892DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C ID IDM IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg Limit 100 ± 20 30g 27 8.0a, b 7.3a, b 50 30g 3.1a, b 10 5 52 43 3.7a, b 3.1a, b - 55 to 150 260 N-Channel MOSFET Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t  10 s Steady State RthJA RthJC 26 1.9 33 °C/W 2.4 Notes: a...