SIS890DN

N-Channel 100 V (D-S) MOSFET SiS890DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) 0.0235 at VGS = 10 V 0.0245 at VGS = 7.5 V 0.0315 at VGS = 4.5 V ID (A)f 30g 30g 28.5 Qg (Typ.) 9.5 nC PowerPAK® 1212-8 3.30 mm S 1S 3.30 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiS890DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Capable of Operating with 5 V Gate Drive Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Telecom Bricks Primary side switch Synchronous Rectification Industrial D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg Limit 100 ± 20 30g 26.5 8.8a, b 7.1a, b 60 30g 3.1a, b 10 5 52 33 3.7a, b 2.4a, b - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambie...