N-Channel MOSFET
www.vishay.com
SiR882ADP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6 5
6.15 mm 1
...
Description
www.vishay.com
SiR882ADP
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6 5
6.15 mm 1
Top View
5.15 mm
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration
1 2S 3S 4S G Bottom View
100 0.0087 0.0094 0.0115
19.5 60 Single
FEATURES TrenchFET® power MOSFET
100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
D
DC/DC primary side switch
Telecom/server 48 V, full/half-bridge DC/DC
Industrial
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAK SO-8 SiR882ADP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 300 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT
100 ± 20 60 a 55 17.6 b, c 13.9 b, c 80 60 a 4.9 b, c 30 45 83 53 5.4 b, c 3.4 b, c -55 to +150 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL...
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