SIJ478DP

www.vishay.com SiJ478DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) () Max. 0.0080 at VGS = 10 V 0.0088 at VGS = 6.0 V 0.0115 at VGS = 4.5 V ID (A) 60a 60a 54 PowerPAK® SO-8L Single Qg (Typ.) 17.1 nC 6.15 mm 5.13 mm D 4 G 3 S 2 S 1 S Ordering Information: SiJ478DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization:  For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS Primary Side Switching Synchronous Rectification DC/AC Inverters LED Backlighting D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 80 ± 20 60a 52.7 18.6b, c 14.9b, c 150 60a 4.5b, c 30 45 62.5 40 5b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical ...