SIJ420DP

New Product N-Channel 20 V (D-S) MOSFET SiJ420DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0026 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a, g 50 50 Qg (Typ.) 28.7 nC PowerPAK® SO-8L Single 6.15 mm 5.13 mm D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS POL OR-ing DC/DC D 4 G 3 S 2 S 1 S Ordering Information: SiJ420DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Soldering Recommendations (Peak Temperature)d, e G S N-Channel MOSFET Limit 20 ± 20 50g 50g 32b, c 25.3b, c 80 50g 4.3b, c 30 45 62.5 40 4.8b, c 3.0b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 22 1.4 26 °C/W 2.0 Notes: a. Based on TC = 25 °C. b. Surface moun...