Power MOSFET
Power MOSFET
IRLI540G, SiHLI540G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Description
Power MOSFET
IRLI540G, SiHLI540G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
64 9.4 27 Single
0.077
TO-220 FULLPAK
D
GDS
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive RDS (on) Specified at VGS = 4 V and 5 V Fast Switching Ease of Paralleling
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRLI540GPbF SiHLI540G-E3 IRLI540G SiHLI540G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 5 V
TC = 25 °C TC = 100 °C
ID IDM
Single Pulse Avalanche Energyb Ma...
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