SI4190ADY

New Product N-Channel 100 V (D-S) MOSFET Si4190ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.0088 at VGS = 10 V 0.0094 at VGS = 7.5 V 0.0120 at VGS = 4.5 V SO-8 ID (A)a 18.4 17.8 15.8 Qg (Typ.) 20.7 nC S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4190ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS DC/DC Primary Side Switch Telecom/Server Industrial D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 100 ± 20 18.4 14.6 13b, c 10.3b, c 70 5.4 2.7b, c 30 45 6 3.8 3b, c 1.9b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t  10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. Symbol RthJA...